TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application
For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO x ) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO x gate dielectric, not only reduces gate leakage current but also improves I ON /I OFF ratio of PFET to 10 8...
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| creator | Kim, Sung Min Yoon, Eun Jung Kim, Min Sang Suk, Sung Dae Li, Ming Jun, Lian Oh, Chang Woo Yeo, Kyoung Hwan Kim, Sung Hwan Lee, Sung Young Choi, Yong Lack Kim, Na-young Yeoh, Yun-young Park, Hong-Bae Kim, Chul Sung Kim, Hye-Min Kim, Dong-Chan Park, Heung Sik Kim, Hyung Do Lee, Young Mi Kim, Dong-Won Park, Donggun Ryu, Byung-Il |
| description | For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO x ) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO x gate dielectric, not only reduces gate leakage current but also improves I ON /I OFF ratio of PFET to 10 8 . Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V |
| doi_str_mv | 10.1109/VLSIT.2006.1705222 |
| format | Conference Proceeding |
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Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V</description><subject>CMOS technology</subject><subject>Electrodes</subject><subject>Fabrication</subject><subject>FETs</subject><subject>High K dielectric materials</subject><subject>High-K gate dielectrics</subject><subject>Leakage current</subject><subject>Random access memory</subject><subject>Tin</subject><subject>Transistors</subject><issn>0743-1562</issn><isbn>1424400058</isbn><isbn>9781424400058</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1Kw0AYRQdUsNa-gG5mqYu030xmJp1lKf2DxIIJbsuX-cHRNC3JFPTtDdjVvRy4Z3EJeWIwZQz07CMvd9WUA6gpy0Byzm_IAxNcCACQ81sygkykCZOK35NJ338NmGmViSwbEazC22zry7D_oRuMjpYRzTctLk0MyfIT29Y1dB1cY-nKe2cirTps-9DHU0dfCrNeVa_UD7281FTK9kjL90VBF-dzEwzGcGofyZ3HpneTa45JNYyW2yTfb3bLRZ4EDTHRJtXOg0GtBau9gxrR2jlTKK03NTPepjpFpoVUykrDjHNeZsCNrpUVNh2T539tcM4dzl04Yvd7uB6S_gEVfVQe</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Kim, Sung Min</creator><creator>Yoon, Eun Jung</creator><creator>Kim, Min Sang</creator><creator>Suk, Sung Dae</creator><creator>Li, Ming</creator><creator>Jun, Lian</creator><creator>Oh, Chang Woo</creator><creator>Yeo, Kyoung Hwan</creator><creator>Kim, Sung Hwan</creator><creator>Lee, Sung Young</creator><creator>Choi, Yong Lack</creator><creator>Kim, Na-young</creator><creator>Yeoh, Yun-young</creator><creator>Park, Hong-Bae</creator><creator>Kim, Chul Sung</creator><creator>Kim, Hye-Min</creator><creator>Kim, Dong-Chan</creator><creator>Park, Heung Sik</creator><creator>Kim, Hyung Do</creator><creator>Lee, Young Mi</creator><creator>Kim, Dong-Won</creator><creator>Park, Donggun</creator><creator>Ryu, Byung-Il</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2006</creationdate><title>TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application</title><author>Kim, Sung Min ; 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Digest of Technical Papers</btitle><stitle>VLSIT</stitle><date>2006</date><risdate>2006</risdate><spage>72</spage><epage>73</epage><pages>72-73</pages><issn>0743-1562</issn><isbn>1424400058</isbn><isbn>9781424400058</isbn><abstract>For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO x ) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO x gate dielectric, not only reduces gate leakage current but also improves I ON /I OFF ratio of PFET to 10 8 . Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V</abstract><pub>IEEE</pub><doi>10.1109/VLSIT.2006.1705222</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0743-1562 |
| ispartof | 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.72-73 |
| issn | 0743-1562 |
| language | eng |
| recordid | cdi_ieee_primary_1705222 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS technology Electrodes Fabrication FETs High K dielectric materials High-K gate dielectrics Leakage current Random access memory Tin Transistors |
| title | TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application |
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