TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application

TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application

For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO x ) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO x gate dielectric, not only reduces gate leakage current but also improves I ON /I OFF ratio of PFET to 10 8...

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Bibliographische Detailangaben
Hauptverfasser: Kim, Sung Min, Yoon, Eun Jung, Kim, Min Sang, Suk, Sung Dae, Li, Ming, Jun, Lian, Oh, Chang Woo, Yeo, Kyoung Hwan, Kim, Sung Hwan, Lee, Sung Young, Choi, Yong Lack, Kim, Na-young, Yeoh, Yun-young, Park, Hong-Bae, Kim, Chul Sung, Kim, Hye-Min, Kim, Dong-Chan, Park, Heung Sik, Kim, Hyung Do, Lee, Young Mi, Kim, Dong-Won, Park, Donggun, Ryu, Byung-Il
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Electrodes
Fabrication
FETs
High K dielectric materials
High-K gate dielectrics
Leakage current
Random access memory
Tin
Transistors
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Beschreibung
Zusammenfassung:For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO x ) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO x gate dielectric, not only reduces gate leakage current but also improves I ON /I OFF ratio of PFET to 10 8 . Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705222