122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate
As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at V cc = 0.8 V. Using tall-embedded-gate (TEG) and source/...
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Sprache: | eng |
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Zusammenfassung: | As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at V cc = 0.8 V. Using tall-embedded-gate (TEG) and source/drain (S/D) engineering, 2.6times10 5 times on/off current ratio and 3.46 mA/μm of on-state current at 13 nA/um of off-state current were achieved. In addition, triple-bridge-channel MOSFET (TBCFET) is made for the first time and compared with single-bridge-channel MOSFET (SBCFET) and MBCFET |
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ISSN: | 0743-1562 |
DOI: | 10.1109/VLSIT.2006.1705220 |