122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate

As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at V cc = 0.8 V. Using tall-embedded-gate (TEG) and source/...

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Hauptverfasser: Kim, Min Sang, Lee, S.-Y., Yoon, E.-J., Kim, Sung Min, Lian, J., Lee, K.-H., Cho, N., Lee, M.-S., Hwang, D., Lee, Y.-S., Kim, D.-W., Park, D., Ryu, B.-I.
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Sprache:eng
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Zusammenfassung:As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at V cc = 0.8 V. Using tall-embedded-gate (TEG) and source/drain (S/D) engineering, 2.6times10 5 times on/off current ratio and 3.46 mA/μm of on-state current at 13 nA/um of off-state current were achieved. In addition, triple-bridge-channel MOSFET (TBCFET) is made for the first time and compared with single-bridge-channel MOSFET (SBCFET) and MBCFET
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705220