Fully 3-Dimensional NOR Flash Cell with Recessed Channel and Cylindrical Floating Gate - A Scaling Direction for 65nm and Beyond

Fully 3-Dimensional NOR Flash Cell with Recessed Channel and Cylindrical Floating Gate - A Scaling Direction for 65nm and Beyond

For the first time, a fully 3-dimensional (3-D) flash cell with recessed channel and cylindrical floating gate is successfully integrated with 65nm MLC NOR flash technology. Key process technologies to achieve the novel cell structures are shown to be highly feasible. Superior scalability and compar...

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Bibliographische Detailangaben
Hauptverfasser: Sim, S.-P., Kim, K.S., Lee, H.K., Han, J.I., Kwon, W.H., Han, J.H., Lee, B.Y., Jung, C., Park, J.H., Kim, D.J., Jang, D.H., Lee, W.H., Park, C., Kim, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Channel hot electron injection
Counting circuits
Degradation
Flash memory
Interference
Lithography
Nonvolatile memory
Oxidation
Robustness
Scalability
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Beschreibung
Zusammenfassung:For the first time, a fully 3-dimensional (3-D) flash cell with recessed channel and cylindrical floating gate is successfully integrated with 65nm MLC NOR flash technology. Key process technologies to achieve the novel cell structures are shown to be highly feasible. Superior scalability and comparable device characteristics including V th distribution and tunnel oxide reliability are proved through 512Mb full chip integration. Intrinsic immunity on the short channel effect of this 3-D cell opens a promising path for the continued scaling of the floating gate flash memories for 65nm and beyond
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705195