430-V 12.4- hboxmOmegacdot hboxcm^2Normally off 4H-SiC Lateral JFET

This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8 mum created by tilted aluminum imp...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2006-10, Vol.27 (10), p.834-836
Hauptverfasser:	Ming Su, Kuang Sheng, Yuzhu Li, Yongxi Zhang, Jian Wu, Zhao, J.H., Jianhui Zhang, Li, L.X.
Format:	Artikel
Sprache:	eng
Schlagworte:	Fabrication Implantation junction field-effect transistor (JFET) Monolithic integrated circuits MOSFETs Nitrogen normally OFF Predictive models Silicon carbide silicon carbide (SiC) System-on-a-chip Temperature Two dimensional displays vertical channel Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!