Temperature Dependence of Spin Transfer Switching in Nanosecond Regime
We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magneti...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2685-2687 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2687 |
|---|---|
| container_issue | 10 |
| container_start_page | 2685 |
| container_title | IEEE transactions on magnetics |
| container_volume | 42 |
| creator | Apalkov, D. Zhitao Diao Panchula, A. Shengyuan Wang Yiming Huai Kawabata, K. |
| description | We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magnetization deviation from the easy axis of the free layer. The study of asymmetry between antiparallel (AP) to parallel (P) and P to AP switching is presented |
| doi_str_mv | 10.1109/TMAG.2006.878817 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1704405</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1704405</ieee_id><sourcerecordid>914654569</sourcerecordid><originalsourceid>FETCH-LOGICAL-c352t-eea26617310d59cfd0340ede8cfaafb4fd37b8787a712e315dbf3b220299e5d83</originalsourceid><addsrcrecordid>eNpdkN9LwzAQx4MoOKfvgi9FEJ8686tt8jimm8JUcPU5ZOlldmxpTTrE_96MDgY-HXf3uS_HB6FrgkeEYPlQvo5nI4pxPhKFEKQ4QQMiOUnjRJ6iAcZEpJLn_BxdhLCOLc8IHqBpCdsWvO52HpJHaMFV4AwkjU0Wbe2S0msXLPhk8VN35qt2qyRO37RrApjGVckHrOotXKIzqzcBrg51iD6nT-XkOZ2_z14m43lqWEa7FEDTPCcFI7jKpLEVZhxDBcJYre2S24oVy_h_oQtCgZGsWlq2pBRTKSGrBBui-z639c33DkKntnUwsNloB80uKEl4nvEsl5G8_Ueum5138TklIiIoZ_s43EPGNyF4sKr19Vb7X0Ww2mtVe61qr1X1WuPJ3SFXB6M3NvoxdTjeCYoZozRyNz1XA8BxXWDOccb-AOsKf8Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>865482438</pqid></control><display><type>article</type><title>Temperature Dependence of Spin Transfer Switching in Nanosecond Regime</title><source>IEEE Electronic Library (IEL)</source><creator>Apalkov, D. ; Zhitao Diao ; Panchula, A. ; Shengyuan Wang ; Yiming Huai ; Kawabata, K.</creator><creatorcontrib>Apalkov, D. ; Zhitao Diao ; Panchula, A. ; Shengyuan Wang ; Yiming Huai ; Kawabata, K.</creatorcontrib><description>We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magnetization deviation from the easy axis of the free layer. The study of asymmetry between antiparallel (AP) to parallel (P) and P to AP switching is presented</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2006.878817</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Asymmetry ; Cross-disciplinary physics: materials science; rheology ; Deviation ; Exact sciences and technology ; Magnetic anisotropy ; Magnetic memories ; Magnetic separation ; Magnetic switching ; Magnetic tunneling ; Magnetism ; Magnetization ; Magnetostatics ; Materials science ; Mathematical analysis ; Micromagnetics ; modeling ; Nanocomposites ; Nanomaterials ; Nanostructure ; Other topics in materials science ; Perpendicular magnetic anisotropy ; Physics ; spin transfer ; Switching ; Temperature dependence ; thin films ; Torque</subject><ispartof>IEEE transactions on magnetics, 2006-10, Vol.42 (10), p.2685-2687</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-eea26617310d59cfd0340ede8cfaafb4fd37b8787a712e315dbf3b220299e5d83</citedby><cites>FETCH-LOGICAL-c352t-eea26617310d59cfd0340ede8cfaafb4fd37b8787a712e315dbf3b220299e5d83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1704405$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23929,23930,25139,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1704405$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18203322$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Apalkov, D.</creatorcontrib><creatorcontrib>Zhitao Diao</creatorcontrib><creatorcontrib>Panchula, A.</creatorcontrib><creatorcontrib>Shengyuan Wang</creatorcontrib><creatorcontrib>Yiming Huai</creatorcontrib><creatorcontrib>Kawabata, K.</creatorcontrib><title>Temperature Dependence of Spin Transfer Switching in Nanosecond Regime</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magnetization deviation from the easy axis of the free layer. The study of asymmetry between antiparallel (AP) to parallel (P) and P to AP switching is presented</description><subject>Asymmetry</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deviation</subject><subject>Exact sciences and technology</subject><subject>Magnetic anisotropy</subject><subject>Magnetic memories</subject><subject>Magnetic separation</subject><subject>Magnetic switching</subject><subject>Magnetic tunneling</subject><subject>Magnetism</subject><subject>Magnetization</subject><subject>Magnetostatics</subject><subject>Materials science</subject><subject>Mathematical analysis</subject><subject>Micromagnetics</subject><subject>modeling</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Other topics in materials science</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Physics</subject><subject>spin transfer</subject><subject>Switching</subject><subject>Temperature dependence</subject><subject>thin films</subject><subject>Torque</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkN9LwzAQx4MoOKfvgi9FEJ8686tt8jimm8JUcPU5ZOlldmxpTTrE_96MDgY-HXf3uS_HB6FrgkeEYPlQvo5nI4pxPhKFEKQ4QQMiOUnjRJ6iAcZEpJLn_BxdhLCOLc8IHqBpCdsWvO52HpJHaMFV4AwkjU0Wbe2S0msXLPhk8VN35qt2qyRO37RrApjGVckHrOotXKIzqzcBrg51iD6nT-XkOZ2_z14m43lqWEa7FEDTPCcFI7jKpLEVZhxDBcJYre2S24oVy_h_oQtCgZGsWlq2pBRTKSGrBBui-z639c33DkKntnUwsNloB80uKEl4nvEsl5G8_Ueum5138TklIiIoZ_s43EPGNyF4sKr19Vb7X0Ww2mtVe61qr1X1WuPJ3SFXB6M3NvoxdTjeCYoZozRyNz1XA8BxXWDOccb-AOsKf8Q</recordid><startdate>20061001</startdate><enddate>20061001</enddate><creator>Apalkov, D.</creator><creator>Zhitao Diao</creator><creator>Panchula, A.</creator><creator>Shengyuan Wang</creator><creator>Yiming Huai</creator><creator>Kawabata, K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20061001</creationdate><title>Temperature Dependence of Spin Transfer Switching in Nanosecond Regime</title><author>Apalkov, D. ; Zhitao Diao ; Panchula, A. ; Shengyuan Wang ; Yiming Huai ; Kawabata, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-eea26617310d59cfd0340ede8cfaafb4fd37b8787a712e315dbf3b220299e5d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Asymmetry</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deviation</topic><topic>Exact sciences and technology</topic><topic>Magnetic anisotropy</topic><topic>Magnetic memories</topic><topic>Magnetic separation</topic><topic>Magnetic switching</topic><topic>Magnetic tunneling</topic><topic>Magnetism</topic><topic>Magnetization</topic><topic>Magnetostatics</topic><topic>Materials science</topic><topic>Mathematical analysis</topic><topic>Micromagnetics</topic><topic>modeling</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Other topics in materials science</topic><topic>Perpendicular magnetic anisotropy</topic><topic>Physics</topic><topic>spin transfer</topic><topic>Switching</topic><topic>Temperature dependence</topic><topic>thin films</topic><topic>Torque</topic><toplevel>online_resources</toplevel><creatorcontrib>Apalkov, D.</creatorcontrib><creatorcontrib>Zhitao Diao</creatorcontrib><creatorcontrib>Panchula, A.</creatorcontrib><creatorcontrib>Shengyuan Wang</creatorcontrib><creatorcontrib>Yiming Huai</creatorcontrib><creatorcontrib>Kawabata, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Apalkov, D.</au><au>Zhitao Diao</au><au>Panchula, A.</au><au>Shengyuan Wang</au><au>Yiming Huai</au><au>Kawabata, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature Dependence of Spin Transfer Switching in Nanosecond Regime</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2006-10-01</date><risdate>2006</risdate><volume>42</volume><issue>10</issue><spage>2685</spage><epage>2687</epage><pages>2685-2687</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magnetization deviation from the easy axis of the free layer. The study of asymmetry between antiparallel (AP) to parallel (P) and P to AP switching is presented</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2006.878817</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9464 |
| ispartof | IEEE transactions on magnetics, 2006-10, Vol.42 (10), p.2685-2687 |
| issn | 0018-9464 1941-0069 |
| language | eng |
| recordid | cdi_ieee_primary_1704405 |
| source | IEEE Electronic Library (IEL) |
| subjects | Asymmetry Cross-disciplinary physics: materials science rheology Deviation Exact sciences and technology Magnetic anisotropy Magnetic memories Magnetic separation Magnetic switching Magnetic tunneling Magnetism Magnetization Magnetostatics Materials science Mathematical analysis Micromagnetics modeling Nanocomposites Nanomaterials Nanostructure Other topics in materials science Perpendicular magnetic anisotropy Physics spin transfer Switching Temperature dependence thin films Torque |
| title | Temperature Dependence of Spin Transfer Switching in Nanosecond Regime |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T09%3A26%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature%20Dependence%20of%20Spin%20Transfer%20Switching%20in%20Nanosecond%20Regime&rft.jtitle=IEEE%20transactions%20on%20magnetics&rft.au=Apalkov,%20D.&rft.date=2006-10-01&rft.volume=42&rft.issue=10&rft.spage=2685&rft.epage=2687&rft.pages=2685-2687&rft.issn=0018-9464&rft.eissn=1941-0069&rft.coden=IEMGAQ&rft_id=info:doi/10.1109/TMAG.2006.878817&rft_dat=%3Cproquest_RIE%3E914654569%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=865482438&rft_id=info:pmid/&rft_ieee_id=1704405&rfr_iscdi=true |