Temperature Dependence of Spin Transfer Switching in Nanosecond Regime

Temperature Dependence of Spin Transfer Switching in Nanosecond Regime

We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magneti...

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Veröffentlicht in:IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2685-2687
Hauptverfasser: Apalkov, D., Zhitao Diao, Panchula, A., Shengyuan Wang, Yiming Huai, Kawabata, K.
Format: Artikel
Sprache:eng
Schlagworte:
Asymmetry
Cross-disciplinary physics: materials science
rheology
Deviation
Exact sciences and technology
Magnetic anisotropy
Magnetic memories
Magnetic separation
Magnetic switching
Magnetic tunneling
Magnetism
Magnetization
Magnetostatics
Materials science
Mathematical analysis
Micromagnetics
modeling
Nanocomposites
Nanomaterials
Nanostructure
Other topics in materials science
Perpendicular magnetic anisotropy
Physics
spin transfer
Switching
Temperature dependence
thin films
Torque
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Beschreibung
Zusammenfassung:We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magnetization deviation from the easy axis of the free layer. The study of asymmetry between antiparallel (AP) to parallel (P) and P to AP switching is presented
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2006.878817