Depleted surface layer AlInAs/GaInAs/InP HFETs

Depleted surface layer AlInAs/GaInAs/InP HFETs

An investigation of InP HFETs that combine a highly doped, thick cap layer with an undoped surface layer by using a highly doped thin surface layer that is depleted by the surface potential is discussed. Very good DC characteristics without kinks, good gate characteristics, and excellent microwave p...

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Bibliographische Detailangaben
Hauptverfasser: Daembkes, H., Dickmann, J., Wiersch, A., Kunzel, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electric breakdown
Gallium arsenide
HEMTs
Indium phosphide
Leakage current
Microwave devices
MODFETs
Out of order
Scattering parameters
Surface resistance
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Zusammenfassung:An investigation of InP HFETs that combine a highly doped, thick cap layer with an undoped surface layer by using a highly doped thin surface layer that is depleted by the surface potential is discussed. Very good DC characteristics without kinks, good gate characteristics, and excellent microwave performance are observed. For 0.3- mu m gate length devices f/sub maxGU/ of more than 250 GHz is obtained. From measurements of the bias dependent S-parameters, the corresponding variation of equivalent circuit elements is deduced. The measurements show the influence of the depleted surface layer.< >
DOI:10.1109/CORNEL.1991.170049