The Modern Technology for Silicon NanoFET
Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 29 |
|---|---|
| container_issue | |
| container_start_page | 27 |
| container_title | |
| container_volume | |
| creator | Lobanova, T.V. Vorontsov, Y.I. Kalinin, S.V. |
| description | Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed |
| doi_str_mv | 10.1109/SIBEDM.2006.231996 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1694130</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1694130</ieee_id><sourcerecordid>1694130</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-c75d97b0caf61d61da2d85cdf52132a86ca52819c3530d4b164c959099db2d053</originalsourceid><addsrcrecordid>eNotjLFOwzAURS0BElXJD8CSlSHhPTvP9huhtFCphaHZK8d2aFCIUcLSvycSXB3pSGe4QtwilIjAD4ft0_p5X0oAXUqFzPpCZGwsGWMl6ErTpVigRSqUQXktsmn6hHlVRZJoIe7rU8z3KcRxyOvoT0Pq08c5b9OYH7q-82nI39yQNuv6Rly1rp9i9u-lqOe6ei127y_b1eOu6Bh-Cm8osGnAu1ZjmHEyWPKhJYlKOqu9I2mRvSIFoWpQV56JgTk0MgCppbj7u-1ijMfvsfty4_mImitUoH4Bsk9ArQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The Modern Technology for Silicon NanoFET</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Lobanova, T.V. ; Vorontsov, Y.I. ; Kalinin, S.V.</creator><creatorcontrib>Lobanova, T.V. ; Vorontsov, Y.I. ; Kalinin, S.V.</creatorcontrib><description>Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 9785778206465</identifier><identifier>ISBN: 5778206461</identifier><identifier>DOI: 10.1109/SIBEDM.2006.231996</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectric materials ; High K dielectric materials ; High-K gate dielectrics ; Lattices ; Mass production ; MOSFETs ; Permittivity ; Silicon compounds ; Silicon on insulator technology ; Space technology</subject><ispartof>International Workshops and Tutorials on Electron Devices and Materials, 2006, p.27-29</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1694130$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1694130$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lobanova, T.V.</creatorcontrib><creatorcontrib>Vorontsov, Y.I.</creatorcontrib><creatorcontrib>Kalinin, S.V.</creatorcontrib><title>The Modern Technology for Silicon NanoFET</title><title>International Workshops and Tutorials on Electron Devices and Materials</title><addtitle>SBIEDM</addtitle><description>Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed</description><subject>Dielectric materials</subject><subject>High K dielectric materials</subject><subject>High-K gate dielectrics</subject><subject>Lattices</subject><subject>Mass production</subject><subject>MOSFETs</subject><subject>Permittivity</subject><subject>Silicon compounds</subject><subject>Silicon on insulator technology</subject><subject>Space technology</subject><issn>1815-3712</issn><isbn>9785778206465</isbn><isbn>5778206461</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjLFOwzAURS0BElXJD8CSlSHhPTvP9huhtFCphaHZK8d2aFCIUcLSvycSXB3pSGe4QtwilIjAD4ft0_p5X0oAXUqFzPpCZGwsGWMl6ErTpVigRSqUQXktsmn6hHlVRZJoIe7rU8z3KcRxyOvoT0Pq08c5b9OYH7q-82nI39yQNuv6Rly1rp9i9u-lqOe6ei127y_b1eOu6Bh-Cm8osGnAu1ZjmHEyWPKhJYlKOqu9I2mRvSIFoWpQV56JgTk0MgCppbj7u-1ijMfvsfty4_mImitUoH4Bsk9ArQ</recordid><startdate>200607</startdate><enddate>200607</enddate><creator>Lobanova, T.V.</creator><creator>Vorontsov, Y.I.</creator><creator>Kalinin, S.V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200607</creationdate><title>The Modern Technology for Silicon NanoFET</title><author>Lobanova, T.V. ; Vorontsov, Y.I. ; Kalinin, S.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-c75d97b0caf61d61da2d85cdf52132a86ca52819c3530d4b164c959099db2d053</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Dielectric materials</topic><topic>High K dielectric materials</topic><topic>High-K gate dielectrics</topic><topic>Lattices</topic><topic>Mass production</topic><topic>MOSFETs</topic><topic>Permittivity</topic><topic>Silicon compounds</topic><topic>Silicon on insulator technology</topic><topic>Space technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Lobanova, T.V.</creatorcontrib><creatorcontrib>Vorontsov, Y.I.</creatorcontrib><creatorcontrib>Kalinin, S.V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lobanova, T.V.</au><au>Vorontsov, Y.I.</au><au>Kalinin, S.V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The Modern Technology for Silicon NanoFET</atitle><btitle>International Workshops and Tutorials on Electron Devices and Materials</btitle><stitle>SBIEDM</stitle><date>2006-07</date><risdate>2006</risdate><spage>27</spage><epage>29</epage><pages>27-29</pages><issn>1815-3712</issn><isbn>9785778206465</isbn><isbn>5778206461</isbn><abstract>Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed</abstract><pub>IEEE</pub><doi>10.1109/SIBEDM.2006.231996</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1815-3712 |
| ispartof | International Workshops and Tutorials on Electron Devices and Materials, 2006, p.27-29 |
| issn | 1815-3712 |
| language | eng |
| recordid | cdi_ieee_primary_1694130 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Dielectric materials High K dielectric materials High-K gate dielectrics Lattices Mass production MOSFETs Permittivity Silicon compounds Silicon on insulator technology Space technology |
| title | The Modern Technology for Silicon NanoFET |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T20%3A56%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20Modern%20Technology%20for%20Silicon%20NanoFET&rft.btitle=International%20Workshops%20and%20Tutorials%20on%20Electron%20Devices%20and%20Materials&rft.au=Lobanova,%20T.V.&rft.date=2006-07&rft.spage=27&rft.epage=29&rft.pages=27-29&rft.issn=1815-3712&rft.isbn=9785778206465&rft.isbn_list=5778206461&rft_id=info:doi/10.1109/SIBEDM.2006.231996&rft_dat=%3Cieee_6IE%3E1694130%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1694130&rfr_iscdi=true |