The Modern Technology for Silicon NanoFET

The Modern Technology for Silicon NanoFET

Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed

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Bibliographische Detailangaben
Hauptverfasser: Lobanova, T.V., Vorontsov, Y.I., Kalinin, S.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectric materials
High K dielectric materials
High-K gate dielectrics
Lattices
Mass production
MOSFETs
Permittivity
Silicon compounds
Silicon on insulator technology
Space technology
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Beschreibung
Zusammenfassung:Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed
ISSN:1815-3712
DOI:10.1109/SIBEDM.2006.231996