Afterpulsing in InGaAs/InP single photon avalanche photodetectors

Afterpulsing in InGaAs/InP single photon avalanche photodetectors

The effect of short gating pulses on after-pulsing in a single photon avalanche photodetector operating at a telecom wavelength of 1.5 mum is characterized and discussed. Comparison between short and longer overbias gate pulses shows that the number of carriers created with a 1 ns (short) gating pul...

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Hauptverfasser: Ben-Michael, R., Itzler, M.A., Nyman, B., Entwistle, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breakdown voltage
Electric breakdown
Indium gallium arsenide
Indium phosphide
Optical pulses
Photodetectors
Pulse generation
Semiconductor lasers
Space vector pulse width modulation
Steady-state
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Beschreibung
Zusammenfassung:The effect of short gating pulses on after-pulsing in a single photon avalanche photodetector operating at a telecom wavelength of 1.5 mum is characterized and discussed. Comparison between short and longer overbias gate pulses shows that the number of carriers created with a 1 ns (short) gating pulse is lower than that of a 20 ns pulse, when the avalanche is dark-count generated
ISSN:1099-4742
2376-8614
DOI:10.1109/LEOSST.2006.1694045