Hole transport in plasma polymerized organosilicon films

Hole transport in plasma polymerized organosilicon films

Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized...

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Hauptverfasser: Sielski, J., Kryszewski, M.
Format: Tagungsbericht
Sprache:eng
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Amorphous materials
Annealing
Circuits
Conductivity
Current measurement
Plasma measurements
Plasma temperature
Plasma transport processes
Polarization
Polymer films
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description Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization).< >
doi_str_mv 10.1109/ISE.1991.167176
format Conference Proceeding
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Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. 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Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization).&lt; &gt;</description><subject>Amorphous materials</subject><subject>Annealing</subject><subject>Circuits</subject><subject>Conductivity</subject><subject>Current measurement</subject><subject>Plasma measurements</subject><subject>Plasma temperature</subject><subject>Plasma transport processes</subject><subject>Polarization</subject><subject>Polymer films</subject><isbn>9780780301122</isbn><isbn>0780301129</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FKAzEURQMiKHXWgqv8wIx5k3byspRSbaHgQl2XN5kXiWQmQzKb-vUW6uXA2R24QjyCagCUfT587BqwFhroDJjuRlTWoLqgFUDb3omqlB912XqjjIZ7gfsUWS6ZpjKnvMgwyTlSGUnOKZ5HzuGXB5nyN02phBhcmqQPcSwP4tZTLFz9eyW-Xnef2319fH87bF-OdQC1XmrHYBy3Htk7QjMowB4JmNGjtYSu67EFb-zG69ahok7ToN3g7GB661CvxNO1G5j5NOcwUj6frvf0H-BdRn4</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Sielski, J.</creator><creator>Kryszewski, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Hole transport in plasma polymerized organosilicon films</title><author>Sielski, J. ; Kryszewski, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-ce17ce2f8efca87d018b8a1ee8f899a8c6b821f795f32c80a63ad3cdc9d7b9c83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Amorphous materials</topic><topic>Annealing</topic><topic>Circuits</topic><topic>Conductivity</topic><topic>Current measurement</topic><topic>Plasma measurements</topic><topic>Plasma temperature</topic><topic>Plasma transport processes</topic><topic>Polarization</topic><topic>Polymer films</topic><toplevel>online_resources</toplevel><creatorcontrib>Sielski, J.</creatorcontrib><creatorcontrib>Kryszewski, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sielski, J.</au><au>Kryszewski, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Hole transport in plasma polymerized organosilicon films</atitle><btitle>[1991 Proceedings] 7th International Symposium on Electrets (ISE 7)</btitle><stitle>ISE</stitle><date>1991</date><risdate>1991</risdate><spage>11</spage><epage>15</epage><pages>11-15</pages><isbn>9780780301122</isbn><isbn>0780301129</isbn><abstract>Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization).&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/ISE.1991.167176</doi><tpages>5</tpages></addata></record>
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subjects Amorphous materials
Annealing
Circuits
Conductivity
Current measurement
Plasma measurements
Plasma temperature
Plasma transport processes
Polarization
Polymer films
title Hole transport in plasma polymerized organosilicon films
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