Hole transport in plasma polymerized organosilicon films

Hole transport in plasma polymerized organosilicon films

Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized...

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Bibliographische Detailangaben
Hauptverfasser: Sielski, J., Kryszewski, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous materials
Annealing
Circuits
Conductivity
Current measurement
Plasma measurements
Plasma temperature
Plasma transport processes
Polarization
Polymer films
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Zusammenfassung:Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization).< >
DOI:10.1109/ISE.1991.167176