Thermal Immune NiSi Technology for Nano-scale CMOSFETs
In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming C...
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| creator | Hi-Deok Lee Soon-Young Oh Yong-Jin Kim Won-Jae Lee In-Shik Han Ihl-Hyun Cho Sung-Bo Hwang Jong-Gun Lee |
| description | In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology |
| doi_str_mv | 10.1109/IWJT.2006.220880 |
| format | Conference Proceeding |
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Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. 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Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology</description><subject>CMOS technology</subject><subject>CMOSFETs</subject><subject>Hydrogen</subject><subject>Nickel</subject><subject>Plasma stability</subject><subject>Plasma temperature</subject><subject>Silicidation</subject><subject>Silicides</subject><subject>Thermal stability</subject><subject>Tin</subject><isbn>9781424400478</isbn><isbn>1424400473</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjstKxEAQRRtEUMbsBTf9A4lV_ah0LyX4iIwzi2lwOaSTihPJQxJdzN8b0Ls5cBaHK8QtQoYI_r58fw2ZAqBMKXAOLkTic4dGGQNgcnclkmX5hHXaW014LSiceB6qXpbD8DOy3HWHTgauT-PUTx9n2U6z3FXjlC511bMs3vaHp8ew3IjLtuoXTv65EWHVxUu63T-XxcM27Tx8py46psasz2wk0tEY5qggqjraulFEMUdGtkiNttiyiZTHBrw2bNsald6Iu79sx8zHr7kbqvl8RCJvKNe_HqJDCg</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Hi-Deok Lee</creator><creator>Soon-Young Oh</creator><creator>Yong-Jin Kim</creator><creator>Won-Jae Lee</creator><creator>In-Shik Han</creator><creator>Ihl-Hyun Cho</creator><creator>Sung-Bo Hwang</creator><creator>Jong-Gun Lee</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2006</creationdate><title>Thermal Immune NiSi Technology for Nano-scale CMOSFETs</title><author>Hi-Deok Lee ; Soon-Young Oh ; Yong-Jin Kim ; Won-Jae Lee ; In-Shik Han ; Ihl-Hyun Cho ; Sung-Bo Hwang ; Jong-Gun Lee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-8b8e6d41095b663b44eeb20b2cb5cd266b71e1e516d351fe4b67bd0934e5fc123</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CMOS technology</topic><topic>CMOSFETs</topic><topic>Hydrogen</topic><topic>Nickel</topic><topic>Plasma stability</topic><topic>Plasma temperature</topic><topic>Silicidation</topic><topic>Silicides</topic><topic>Thermal stability</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Hi-Deok Lee</creatorcontrib><creatorcontrib>Soon-Young Oh</creatorcontrib><creatorcontrib>Yong-Jin Kim</creatorcontrib><creatorcontrib>Won-Jae Lee</creatorcontrib><creatorcontrib>In-Shik Han</creatorcontrib><creatorcontrib>Ihl-Hyun Cho</creatorcontrib><creatorcontrib>Sung-Bo Hwang</creatorcontrib><creatorcontrib>Jong-Gun Lee</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hi-Deok Lee</au><au>Soon-Young Oh</au><au>Yong-Jin Kim</au><au>Won-Jae Lee</au><au>In-Shik Han</au><au>Ihl-Hyun Cho</au><au>Sung-Bo Hwang</au><au>Jong-Gun Lee</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thermal Immune NiSi Technology for Nano-scale CMOSFETs</atitle><btitle>2006 International Workshop on Junction Technology</btitle><stitle>IWJT</stitle><date>2006</date><risdate>2006</risdate><spage>143</spage><epage>146</epage><pages>143-146</pages><isbn>9781424400478</isbn><isbn>1424400473</isbn><abstract>In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology</abstract><pub>IEEE</pub><doi>10.1109/IWJT.2006.220880</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2006 International Workshop on Junction Technology, 2006, p.143-146 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS technology CMOSFETs Hydrogen Nickel Plasma stability Plasma temperature Silicidation Silicides Thermal stability Tin |
| title | Thermal Immune NiSi Technology for Nano-scale CMOSFETs |
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