Thermal Immune NiSi Technology for Nano-scale CMOSFETs

Thermal Immune NiSi Technology for Nano-scale CMOSFETs

In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming C...

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Bibliographische Detailangaben
Hauptverfasser: Hi-Deok Lee, Soon-Young Oh, Yong-Jin Kim, Won-Jae Lee, In-Shik Han, Ihl-Hyun Cho, Sung-Bo Hwang, Jong-Gun Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
CMOSFETs
Hydrogen
Nickel
Plasma stability
Plasma temperature
Silicidation
Silicides
Thermal stability
Tin
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Zusammenfassung:In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology
DOI:10.1109/IWJT.2006.220880