Self-Heating Driven VthShifts in Integrated VDMOS Transistors

Self-Heating Driven VthShifts in Integrated VDMOS Transistors

Large threshold voltage shifts are observed in n-type integrated VDMOS transistors upon hot carrier stress. The effect is enhanced by the total internal temperature (ambient temperature + temperature increase due to power dissipation) of the device as well as by the gate oxide electric field. A mode...

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Bibliographische Detailangaben
Hauptverfasser: Moens, P., Cano, J.F., De Keukeleire, C., Desoete, B., Aresu, S., De Ceuninck, W., De Vleeschouwer, H., Tack, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Ambient intelligence
Degradation
Driver circuits
Hot carriers
Power dissipation
Stress
Switches
Temperature distribution
Temperature sensors
Threshold voltage
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Beschreibung
Zusammenfassung:Large threshold voltage shifts are observed in n-type integrated VDMOS transistors upon hot carrier stress. The effect is enhanced by the total internal temperature (ambient temperature + temperature increase due to power dissipation) of the device as well as by the gate oxide electric field. A model is presented and is used to extract the safe operating area (SOA) of the transistors. This is especially important as smart power technologies are often used in high temperature environments (up to 150-175degC), e.g. in automotive
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2006.1666147