Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect
Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. T...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4 |
|---|---|
| container_issue | |
| container_start_page | 1 |
| container_title | |
| container_volume | |
| creator | Lopez, T. Elferich, R. Koper, N. |
| description | Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena |
| doi_str_mv | 10.1109/ISPSD.2006.1666076 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1666076</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1666076</ieee_id><sourcerecordid>1666076</sourcerecordid><originalsourceid>FETCH-LOGICAL-c139t-5721d463f72cc81e552414b56f96aceadc9fadb7043cd992aed4cb0f4aabd5dc3</originalsourceid><addsrcrecordid>eNotUNtKw0AUXLyApeYH9GV_YOPek33UXmyhWmnqc9nsnm1WtJEkKPl7F-wwMANzzjwMQneM5oxR87Cu3qp5zinVOdNa00JfoAkzUhPKKbtEmSlKmihMwaS5ShnVguhSyRuU9f0HTZBKciMn6HUHP9D1gHfg2uRGHE94FY8NnsOpj8OI9x2cXINfttVyse_xbxyadHy0ncdDi4cG8FPrR7IIAdxwi66D_ewhO-sUvaev2Ypsts_r2eOGOCbMQFTBmZdahII7VzJQiksma6WD0daB9c4E6-uCSuG8MdyCl66mQVpbe-WdmKL7_94IAIfvLn7Zbjyc1xB_MoZROg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Lopez, T. ; Elferich, R. ; Koper, N.</creator><creatorcontrib>Lopez, T. ; Elferich, R. ; Koper, N.</creatorcontrib><description>Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9780780397149</identifier><identifier>ISBN: 0780397142</identifier><identifier>EISSN: 1946-0201</identifier><identifier>DOI: 10.1109/ISPSD.2006.1666076</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Circuit simulation ; Finite element methods ; Laboratories ; Low voltage ; MOSFETs ; Predictive models ; Semiconductor diodes ; Threshold voltage ; Transient analysis</subject><ispartof>2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c139t-5721d463f72cc81e552414b56f96aceadc9fadb7043cd992aed4cb0f4aabd5dc3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1666076$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1666076$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lopez, T.</creatorcontrib><creatorcontrib>Elferich, R.</creatorcontrib><creatorcontrib>Koper, N.</creatorcontrib><title>Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect</title><title>2006 IEEE International Symposium on Power Semiconductor Devices and IC's</title><addtitle>ISPSD</addtitle><description>Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena</description><subject>Analytical models</subject><subject>Circuit simulation</subject><subject>Finite element methods</subject><subject>Laboratories</subject><subject>Low voltage</subject><subject>MOSFETs</subject><subject>Predictive models</subject><subject>Semiconductor diodes</subject><subject>Threshold voltage</subject><subject>Transient analysis</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9780780397149</isbn><isbn>0780397142</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUNtKw0AUXLyApeYH9GV_YOPek33UXmyhWmnqc9nsnm1WtJEkKPl7F-wwMANzzjwMQneM5oxR87Cu3qp5zinVOdNa00JfoAkzUhPKKbtEmSlKmihMwaS5ShnVguhSyRuU9f0HTZBKciMn6HUHP9D1gHfg2uRGHE94FY8NnsOpj8OI9x2cXINfttVyse_xbxyadHy0ncdDi4cG8FPrR7IIAdxwi66D_ewhO-sUvaev2Ypsts_r2eOGOCbMQFTBmZdahII7VzJQiksma6WD0daB9c4E6-uCSuG8MdyCl66mQVpbe-WdmKL7_94IAIfvLn7Zbjyc1xB_MoZROg</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Lopez, T.</creator><creator>Elferich, R.</creator><creator>Koper, N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2006</creationdate><title>Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect</title><author>Lopez, T. ; Elferich, R. ; Koper, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c139t-5721d463f72cc81e552414b56f96aceadc9fadb7043cd992aed4cb0f4aabd5dc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Analytical models</topic><topic>Circuit simulation</topic><topic>Finite element methods</topic><topic>Laboratories</topic><topic>Low voltage</topic><topic>MOSFETs</topic><topic>Predictive models</topic><topic>Semiconductor diodes</topic><topic>Threshold voltage</topic><topic>Transient analysis</topic><toplevel>online_resources</toplevel><creatorcontrib>Lopez, T.</creatorcontrib><creatorcontrib>Elferich, R.</creatorcontrib><creatorcontrib>Koper, N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lopez, T.</au><au>Elferich, R.</au><au>Koper, N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect</atitle><btitle>2006 IEEE International Symposium on Power Semiconductor Devices and IC's</btitle><stitle>ISPSD</stitle><date>2006</date><risdate>2006</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9780780397149</isbn><isbn>0780397142</isbn><abstract>Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2006.1666076</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006, p.1-4 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_1666076 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analytical models Circuit simulation Finite element methods Laboratories Low voltage MOSFETs Predictive models Semiconductor diodes Threshold voltage Transient analysis |
| title | Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T17%3A10%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Reverse%20Recovery%20in%20High%20Density%20Trench%20MOSFETs%20with%20Regard%20to%20the%20Body-Effect&rft.btitle=2006%20IEEE%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20IC's&rft.au=Lopez,%20T.&rft.date=2006&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1063-6854&rft.eissn=1946-0201&rft.isbn=9780780397149&rft.isbn_list=0780397142&rft_id=info:doi/10.1109/ISPSD.2006.1666076&rft_dat=%3Cieee_6IE%3E1666076%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1666076&rfr_iscdi=true |