Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect

Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect

Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. T...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lopez, T., Elferich, R., Koper, N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Circuit simulation
Finite element methods
Laboratories
Low voltage
MOSFETs
Predictive models
Semiconductor diodes
Threshold voltage
Transient analysis
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Beschreibung
Zusammenfassung:Reverse recovery transients in low voltage trench MOSFETs are investigated by means of finite element simulations. In contrast to the turn-off dynamics of a conventional pn junction diode, the particularity of the body diode turn-off in these MOSFETs is its existing strong gate voltage dependency. This behavior can be explained in theory by the so-called body-effect. Its consequences on the reverse recovery current are analyzed in detailed. A behavioral model for circuit simulators is proposed that accurately describes the relevant phenomena
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2006.1666076