High power LDMOS integrated Doherty amplifier for W-CDMA

High power LDMOS integrated Doherty amplifier for W-CDMA

To our knowledge a first integrated Doherty amplifier in a standard SOT502 package has been developed for WCDMA applications. This solution is based on 10W MMIC Doherty cell combined in parallel. The MMIC is based on the latest Philips LDMOST technology (Gen 6) and showed state of the art performanc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Blednov, I.I., van der Zanden, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Costs
High power amplifiers
Impedance
Linearity
MMICs
Multiaccess communication
Power amplifiers
Power system reliability
Semiconductor device packaging
Standards development
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Beschreibung
Zusammenfassung:To our knowledge a first integrated Doherty amplifier in a standard SOT502 package has been developed for WCDMA applications. This solution is based on 10W MMIC Doherty cell combined in parallel. The MMIC is based on the latest Philips LDMOST technology (Gen 6) and showed state of the art performance: 42% Eff has been measured at IMD3 level of -40dBc. Further improvement of linearity to below -50dBc was provided by digital pre-distortions. We believe this approach can be used to achieve powers above 120W. Moreover this approach will lead to a lower cost, more reliable and manufacturable Doherty product
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2006.1651183