A 27.7dBm OIP3 SiGe HBT cascode LNA using IM3 cancellation technique

A 27.7dBm OIP3 SiGe HBT cascode LNA using IM3 cancellation technique

A 1.9GHz low noise amplifier(LNA) is implemented with SiGe BiCMOS process using a modified cascode structure. In order to achieve high linearity and low NF at the same time, the phase of IM3 (3 rd order inter-modulation) in a common emitter amplifier is derived and the new IM3 cancellation method is...

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Bibliographische Detailangaben
Hauptverfasser: Sungmin Ock, Seokyong Hong, Sangwoo Han, Joonsuk Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Gain measurement
Germanium silicon alloys
Heterojunction bipolar transistors
Linearity
Low-noise amplifiers
Noise cancellation
Noise figure
Noise measurement
Silicon germanium
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Beschreibung
Zusammenfassung:A 1.9GHz low noise amplifier(LNA) is implemented with SiGe BiCMOS process using a modified cascode structure. In order to achieve high linearity and low NF at the same time, the phase of IM3 (3 rd order inter-modulation) in a common emitter amplifier is derived and the new IM3 cancellation method is proposed. The measurement results of the LNA at 1930MHz are gain of 16.9dB, noise figure of 1.5dB, and OIP3 of 27.7dBm with a single 2.7V supply. It consumes only 4.4mA
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2006.1651109