60-GHz PA and LNA in 90-nm RF-CMOS

60-GHz power (PA) and low-noise (LNA) amplifiers implemented in a 90-nm RF-CMOS process with thick 9-metal layer copper backend and transistor f T /f max of 140GHz/170GHz are reported. The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth >13GHz, a P 1dB of +6.4dBm with 7% PA...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yao, T., Gordon, M., Yau, K., Yang, M.T., Voinigescu, S.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Contact resistance Current density Germanium silicon alloys Inductors Low-noise amplifiers Millimeter wave measurements MOSFET circuits Noise measurement Silicon germanium
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