60-GHz PA and LNA in 90-nm RF-CMOS

60-GHz power (PA) and low-noise (LNA) amplifiers implemented in a 90-nm RF-CMOS process with thick 9-metal layer copper backend and transistor f T /f max of 140GHz/170GHz are reported. The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth >13GHz, a P 1dB of +6.4dBm with 7% PAE and a saturated output power of +9.3dBm at 60GHz. The LNA features 14.6dB gain, an IIP3 of -6.8dBm, and a simulated NF of 4.5dB, while drawing 16mA from a 1.5V supply. Both circuits employ inductors which reduce the total PA and LNA die sizes to 0.35 times 0.43 mm 2 and 0.35 times 0.40 mm 2 , respectively