60-GHz PA and LNA in 90-nm RF-CMOS

60-GHz power (PA) and low-noise (LNA) amplifiers implemented in a 90-nm RF-CMOS process with thick 9-metal layer copper backend and transistor f T /f max of 140GHz/170GHz are reported. The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth >13GHz, a P 1dB of +6.4dBm with 7% PA...

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Hauptverfasser:	Yao, T., Gordon, M., Yau, K., Yang, M.T., Voinigescu, S.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Contact resistance Current density Germanium silicon alloys Inductors Low-noise amplifiers Millimeter wave measurements MOSFET circuits Noise measurement Silicon germanium
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creator	Yao, T. Gordon, M. Yau, K. Yang, M.T. Voinigescu, S.P.
description	60-GHz power (PA) and low-noise (LNA) amplifiers implemented in a 90-nm RF-CMOS process with thick 9-metal layer copper backend and transistor f T /f max of 140GHz/170GHz are reported. The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth >13GHz, a P 1dB of +6.4dBm with 7% PAE and a saturated output power of +9.3dBm at 60GHz. The LNA features 14.6dB gain, an IIP3 of -6.8dBm, and a simulated NF of 4.5dB, while drawing 16mA from a 1.5V supply. Both circuits employ inductors which reduce the total PA and LNA die sizes to 0.35 times 0.43 mm 2 and 0.35 times 0.40 mm 2 , respectively
doi_str_mv	10.1109/RFIC.2006.1651107
format	Conference Proceeding
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The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth >13GHz, a P 1dB of +6.4dBm with 7% PAE and a saturated output power of +9.3dBm at 60GHz. The LNA features 14.6dB gain, an IIP3 of -6.8dBm, and a simulated NF of 4.5dB, while drawing 16mA from a 1.5V supply. Both circuits employ inductors which reduce the total PA and LNA die sizes to 0.35 times 0.43 mm 2 and 0.35 times 0.40 mm 2 , respectively</abstract><pub>IEEE</pub><doi>10.1109/RFIC.2006.1651107</doi></addata></record>
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subjects	CMOS technology Contact resistance Current density Germanium silicon alloys Inductors Low-noise amplifiers Millimeter wave measurements MOSFET circuits Noise measurement Silicon germanium
title	60-GHz PA and LNA in 90-nm RF-CMOS
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