A mixed-signal BiCMOS front-end signal processor for high-temperature applications
A mixed-signal ASIC that implements an ultrasound front-end receiver in a 0.6 mum BiCMOS HotASIC technology that features metal/metal capacitors and poly1/poly2 resistors is described. The ASIC includes a low-noise amplifier (LNA), a programmable gain amplifier (PGA), an output differential amplifie...
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 2006-07, Vol.41 (7), p.1638-1647 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A mixed-signal ASIC that implements an ultrasound front-end receiver in a 0.6 mum BiCMOS HotASIC technology that features metal/metal capacitors and poly1/poly2 resistors is described. The ASIC includes a low-noise amplifier (LNA), a programmable gain amplifier (PGA), an output differential amplifier (ODA), and a second-order sigma-delta modulator (SDM), and is the most compact system for high-temperature ultrasound applications reported in literature. The circuit has a programmable gain and is designed for measuring the signal response (200 kHz to 700 kHz) from an ultrasound transducer. At 48 MHz clock frequency and 200degC, the power consumption is 85 mW from a single 5 V supply. The die area of the chip is 5.52 mm 2 |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2006.873675 |