Electrothermal model for an SOI-based LIGBT

Electrothermal model for an SOI-based LIGBT

Several vertical insulated gate bipolar transistor (IGBT) electrothermal models are currently available on circuit simulators. However, no reliable electrothermal models have been proposed for the lateral IGBT (LIGBT). In this paper, for the first time, an electrothermal model for an LIGBT structure...

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Veröffentlicht in:IEEE transactions on electron devices 2006-07, Vol.53 (7), p.1698-1704
Hauptverfasser: Gamage, S.S.H.U., Pathirana, V., Udrea, F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuits
Computer simulation
Devices
Electric circuits
Electric, optical and optoelectronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Electrothermal effects
Exact sciences and technology
Insulated gate bipolar transistors
Mathematical models
modeling
Other multijunction devices. Power transistors. Thyristors
power semiconductor devices
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
silicon-on-insulator (SOI) technology
Simulators
Spices
Theoretical study. Circuits analysis and design
Transistors
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Beschreibung
Zusammenfassung:Several vertical insulated gate bipolar transistor (IGBT) electrothermal models are currently available on circuit simulators. However, no reliable electrothermal models have been proposed for the lateral IGBT (LIGBT). In this paper, for the first time, an electrothermal model for an LIGBT structure based on a novel concept recently reported by Udrea (IEDM, p. 451, 2004), and here termed silicon-on-membrane, is presented. The model relies on a systematic study of both the isothermal and self-heating behaviors of the device. The model is further implemented in the SPICE circuit simulator language and validated against extensive Medici numerical simulations and experimental data
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.876281