Theory of electrothermal behavior of bipolar transistors: part III-impact ionization

A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in tha...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-07, Vol.53 (7), p.1683-1697
Hauptverfasser:	Rinaldi, N., d'Alessandro, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bifurcation Bifurcations Bipolar junction transistor (BJT) Bipolar transistors Boundaries breakdown voltage Devices Electronics electrothermal simulations Exact sciences and technology Feedback Impact ionization Ionization Jacobian matrices Mathematical models Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices singlefinger devices Singularities Studies Theory thermal instability Transistors two-finger devices
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