Theory of electrothermal behavior of bipolar transistors: part III-impact ionization
A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in tha...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2006-07, Vol.53 (7), p.1683-1697 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1697 |
|---|---|
| container_issue | 7 |
| container_start_page | 1683 |
| container_title | IEEE transactions on electron devices |
| container_volume | 53 |
| creator | Rinaldi, N. d'Alessandro, V. |
| description | A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in that they introduce a positive feedback mechanism that causes the same singularities in the current-voltage characteristics, namely, a snapback (or flyback) behavior and current bifurcation. These singularities are triggered if either one or both effects are activated. Based on a rigorous mathematical method, referred to as the "Jacobian method," generalized conditions are derived for determining the onset of flyback and bifurcation, which ultimately limit the safe operating region, as a result of the combined action of impact ionization and self-heating. The proposed formulation also includes several important effects not considered in previous contributions. Finally, a detailed analysis of the limiting boundaries for safe device operation is presented, and simple criteria for the optimal choice of the ballasting network are suggested |
| doi_str_mv | 10.1109/TED.2006.876285 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1643503</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1643503</ieee_id><sourcerecordid>889382480</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-72e538101b09aeeececd78bf98de0020e9a34042b086e77c47b0f56a513035863</originalsourceid><addsrcrecordid>eNpdkE1LAzEQhoMoWD_OHrwsgnjaOtl8rjfRqgXBSz2HbJylkW2zJqmgv96UCoKnYZhnhnkfQs4oTCmF9noxu582AHKqlWy02CMTKoSqW8nlPpkAUF23TLNDcpTSe2kl582ELBZLDPGrCn2FA7ocQ15iXNmh6nBpP32I21HnxzDYWOVo18mnHGK6qUYbczWfz2u_Gq3LlQ9r_21zKSfkoLdDwtPfekxeH2aLu6f6-eVxfnf7XDsmINeqQcE0BdpBaxHRoXtTuutb_YYADWBrGQfedKAlKuW46qAX0grKgAkt2TG52t0dY_jYYMpm5ZPDYbBrDJtktC6JG66hkBf_yPewievynNFSUNFyxgt0vYNcDClF7M0Y_crGL0PBbB2b4thsHZud47Jx-XvWJmeHvuhxPv2tKa0V8LZw5zvOl5h_Y8mLB8Z-AGlZhC0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>865159434</pqid></control><display><type>article</type><title>Theory of electrothermal behavior of bipolar transistors: part III-impact ionization</title><source>IEEE Electronic Library (IEL)</source><creator>Rinaldi, N. ; d'Alessandro, V.</creator><creatorcontrib>Rinaldi, N. ; d'Alessandro, V.</creatorcontrib><description>A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in that they introduce a positive feedback mechanism that causes the same singularities in the current-voltage characteristics, namely, a snapback (or flyback) behavior and current bifurcation. These singularities are triggered if either one or both effects are activated. Based on a rigorous mathematical method, referred to as the "Jacobian method," generalized conditions are derived for determining the onset of flyback and bifurcation, which ultimately limit the safe operating region, as a result of the combined action of impact ionization and self-heating. The proposed formulation also includes several important effects not considered in previous contributions. Finally, a detailed analysis of the limiting boundaries for safe device operation is presented, and simple criteria for the optimal choice of the ballasting network are suggested</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.876285</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bifurcation ; Bifurcations ; Bipolar junction transistor (BJT) ; Bipolar transistors ; Boundaries ; breakdown voltage ; Devices ; Electronics ; electrothermal simulations ; Exact sciences and technology ; Feedback ; Impact ionization ; Ionization ; Jacobian matrices ; Mathematical models ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; singlefinger devices ; Singularities ; Studies ; Theory ; thermal instability ; Transistors ; two-finger devices</subject><ispartof>IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1683-1697</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-72e538101b09aeeececd78bf98de0020e9a34042b086e77c47b0f56a513035863</citedby><cites>FETCH-LOGICAL-c350t-72e538101b09aeeececd78bf98de0020e9a34042b086e77c47b0f56a513035863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1643503$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1643503$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17887049$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Rinaldi, N.</creatorcontrib><creatorcontrib>d'Alessandro, V.</creatorcontrib><title>Theory of electrothermal behavior of bipolar transistors: part III-impact ionization</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in that they introduce a positive feedback mechanism that causes the same singularities in the current-voltage characteristics, namely, a snapback (or flyback) behavior and current bifurcation. These singularities are triggered if either one or both effects are activated. Based on a rigorous mathematical method, referred to as the "Jacobian method," generalized conditions are derived for determining the onset of flyback and bifurcation, which ultimately limit the safe operating region, as a result of the combined action of impact ionization and self-heating. The proposed formulation also includes several important effects not considered in previous contributions. Finally, a detailed analysis of the limiting boundaries for safe device operation is presented, and simple criteria for the optimal choice of the ballasting network are suggested</description><subject>Applied sciences</subject><subject>Bifurcation</subject><subject>Bifurcations</subject><subject>Bipolar junction transistor (BJT)</subject><subject>Bipolar transistors</subject><subject>Boundaries</subject><subject>breakdown voltage</subject><subject>Devices</subject><subject>Electronics</subject><subject>electrothermal simulations</subject><subject>Exact sciences and technology</subject><subject>Feedback</subject><subject>Impact ionization</subject><subject>Ionization</subject><subject>Jacobian matrices</subject><subject>Mathematical models</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>singlefinger devices</subject><subject>Singularities</subject><subject>Studies</subject><subject>Theory</subject><subject>thermal instability</subject><subject>Transistors</subject><subject>two-finger devices</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEQhoMoWD_OHrwsgnjaOtl8rjfRqgXBSz2HbJylkW2zJqmgv96UCoKnYZhnhnkfQs4oTCmF9noxu582AHKqlWy02CMTKoSqW8nlPpkAUF23TLNDcpTSe2kl582ELBZLDPGrCn2FA7ocQ15iXNmh6nBpP32I21HnxzDYWOVo18mnHGK6qUYbczWfz2u_Gq3LlQ9r_21zKSfkoLdDwtPfekxeH2aLu6f6-eVxfnf7XDsmINeqQcE0BdpBaxHRoXtTuutb_YYADWBrGQfedKAlKuW46qAX0grKgAkt2TG52t0dY_jYYMpm5ZPDYbBrDJtktC6JG66hkBf_yPewievynNFSUNFyxgt0vYNcDClF7M0Y_crGL0PBbB2b4thsHZud47Jx-XvWJmeHvuhxPv2tKa0V8LZw5zvOl5h_Y8mLB8Z-AGlZhC0</recordid><startdate>20060701</startdate><enddate>20060701</enddate><creator>Rinaldi, N.</creator><creator>d'Alessandro, V.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060701</creationdate><title>Theory of electrothermal behavior of bipolar transistors: part III-impact ionization</title><author>Rinaldi, N. ; d'Alessandro, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-72e538101b09aeeececd78bf98de0020e9a34042b086e77c47b0f56a513035863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Bifurcation</topic><topic>Bifurcations</topic><topic>Bipolar junction transistor (BJT)</topic><topic>Bipolar transistors</topic><topic>Boundaries</topic><topic>breakdown voltage</topic><topic>Devices</topic><topic>Electronics</topic><topic>electrothermal simulations</topic><topic>Exact sciences and technology</topic><topic>Feedback</topic><topic>Impact ionization</topic><topic>Ionization</topic><topic>Jacobian matrices</topic><topic>Mathematical models</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>singlefinger devices</topic><topic>Singularities</topic><topic>Studies</topic><topic>Theory</topic><topic>thermal instability</topic><topic>Transistors</topic><topic>two-finger devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rinaldi, N.</creatorcontrib><creatorcontrib>d'Alessandro, V.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rinaldi, N.</au><au>d'Alessandro, V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theory of electrothermal behavior of bipolar transistors: part III-impact ionization</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-07-01</date><risdate>2006</risdate><volume>53</volume><issue>7</issue><spage>1683</spage><epage>1697</epage><pages>1683-1697</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A detailed theoretical and numerical analysis of single-finger and two-finger bipolar transistors is proposed, which includes both self-heating and impact-ionization effects. Although related to completely different physical phenomena, self-heating and impact ionization share a common feature in that they introduce a positive feedback mechanism that causes the same singularities in the current-voltage characteristics, namely, a snapback (or flyback) behavior and current bifurcation. These singularities are triggered if either one or both effects are activated. Based on a rigorous mathematical method, referred to as the "Jacobian method," generalized conditions are derived for determining the onset of flyback and bifurcation, which ultimately limit the safe operating region, as a result of the combined action of impact ionization and self-heating. The proposed formulation also includes several important effects not considered in previous contributions. Finally, a detailed analysis of the limiting boundaries for safe device operation is presented, and simple criteria for the optimal choice of the ballasting network are suggested</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.876285</doi><tpages>15</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1683-1697 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_1643503 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bifurcation Bifurcations Bipolar junction transistor (BJT) Bipolar transistors Boundaries breakdown voltage Devices Electronics electrothermal simulations Exact sciences and technology Feedback Impact ionization Ionization Jacobian matrices Mathematical models Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices singlefinger devices Singularities Studies Theory thermal instability Transistors two-finger devices |
| title | Theory of electrothermal behavior of bipolar transistors: part III-impact ionization |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T11%3A24%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Theory%20of%20electrothermal%20behavior%20of%20bipolar%20transistors:%20part%20III-impact%20ionization&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Rinaldi,%20N.&rft.date=2006-07-01&rft.volume=53&rft.issue=7&rft.spage=1683&rft.epage=1697&rft.pages=1683-1697&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2006.876285&rft_dat=%3Cproquest_RIE%3E889382480%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=865159434&rft_id=info:pmid/&rft_ieee_id=1643503&rfr_iscdi=true |