Low-temperature operation of SiGe p-n-p HBTs

Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the...

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Veröffentlicht in:	IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2638-2639
Hauptverfasser:	Crabbe, E.F., Harame, D.L., Meyerson, B.S., Stork, J.M.C., Sun, J.Y.-C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Cutoff frequency Degradation Doping Electron devices Germanium silicon alloys Heterojunction bipolar transistors P-n junctions Silicon germanium Temperature
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