Low-temperature operation of SiGe p-n-p HBTs

Low-temperature operation of SiGe p-n-p HBTs

Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the...

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Veröffentlicht in:IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2638-2639
Hauptverfasser: Crabbe, E.F., Harame, D.L., Meyerson, B.S., Stork, J.M.C., Sun, J.Y.-C.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Cutoff frequency
Degradation
Doping
Electron devices
Germanium silicon alloys
Heterojunction bipolar transistors
P-n junctions
Silicon germanium
Temperature
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Zusammenfassung:Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for V/sub bc/=2 V was obtained at 85 K compared to 59 GHz at 298 K.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.163486