Low-temperature operation of SiGe p-n-p HBTs
Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the...
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| Veröffentlicht in: | IEEE transactions on electron devices 1992-11, Vol.39 (11), p.2638-2639 |
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| container_end_page | 2639 |
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| container_issue | 11 |
| container_start_page | 2638 |
| container_title | IEEE transactions on electron devices |
| container_volume | 39 |
| creator | Crabbe, E.F. Harame, D.L. Meyerson, B.S. Stork, J.M.C. Sun, J.Y.-C. |
| description | Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for V/sub bc/=2 V was obtained at 85 K compared to 59 GHz at 298 K.< > |
| doi_str_mv | 10.1109/16.163486 |
| format | Article |
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SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for V/sub bc/=2 V was obtained at 85 K compared to 59 GHz at 298 K.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.163486</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Cutoff frequency ; Degradation ; Doping ; Electron devices ; Germanium silicon alloys ; Heterojunction bipolar transistors ; P-n junctions ; Silicon germanium ; Temperature</subject><ispartof>IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2638-2639</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1550-90ef6efef3b495bc2187ccc3f051cbfa7819d324ef41f8295d681f122893132b3</citedby><cites>FETCH-LOGICAL-c1550-90ef6efef3b495bc2187ccc3f051cbfa7819d324ef41f8295d681f122893132b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/163486$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/163486$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Crabbe, E.F.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Stork, J.M.C.</creatorcontrib><creatorcontrib>Sun, J.Y.-C.</creatorcontrib><title>Low-temperature operation of SiGe p-n-p HBTs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for V/sub bc/=2 V was obtained at 85 K compared to 59 GHz at 298 K.< ></description><subject>Annealing</subject><subject>Cutoff frequency</subject><subject>Degradation</subject><subject>Doping</subject><subject>Electron devices</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>P-n junctions</subject><subject>Silicon germanium</subject><subject>Temperature</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqN0E1LAzEQBuAgCq7Vg1dPexIEUzP52uSoRVuh4MF6DrvpBFa6zZq0iP--qyt49TQzzMMMvIRcApsCMHsHegpaSKOPSAFKVdRqqY9JwRgYaoURp-Qs5_dh1FLygtwu4yfdYddjqnf7hGX86dq4LWMoX9s5lj3d0r5cPKzyOTkJ9SbjxW-dkLenx9VsQZcv8-fZ_ZL64SWjlmHQGDCIRlrVeA6m8t6LwBT4JtSVAbsWXGKQEAy3aq0NBODcWAGCN2JCrse7fYofe8w717XZ42ZTbzHusxsgr7Rg_4BCAldqgDcj9CnmnDC4PrVdnb4cMPcdnAPtxuAGezXaFhH_3Lg8AM8PZYY</recordid><startdate>199211</startdate><enddate>199211</enddate><creator>Crabbe, E.F.</creator><creator>Harame, D.L.</creator><creator>Meyerson, B.S.</creator><creator>Stork, J.M.C.</creator><creator>Sun, J.Y.-C.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>199211</creationdate><title>Low-temperature operation of SiGe p-n-p HBTs</title><author>Crabbe, E.F. ; Harame, D.L. ; Meyerson, B.S. ; Stork, J.M.C. ; Sun, J.Y.-C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1550-90ef6efef3b495bc2187ccc3f051cbfa7819d324ef41f8295d681f122893132b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Annealing</topic><topic>Cutoff frequency</topic><topic>Degradation</topic><topic>Doping</topic><topic>Electron devices</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>P-n junctions</topic><topic>Silicon germanium</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Crabbe, E.F.</creatorcontrib><creatorcontrib>Harame, D.L.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><creatorcontrib>Stork, J.M.C.</creatorcontrib><creatorcontrib>Sun, J.Y.-C.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Crabbe, E.F.</au><au>Harame, D.L.</au><au>Meyerson, B.S.</au><au>Stork, J.M.C.</au><au>Sun, J.Y.-C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature operation of SiGe p-n-p HBTs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1992-11</date><risdate>1992</risdate><volume>39</volume><issue>11</issue><spage>2638</spage><epage>2639</epage><pages>2638-2639</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for V/sub bc/=2 V was obtained at 85 K compared to 59 GHz at 298 K.< ></abstract><pub>IEEE</pub><doi>10.1109/16.163486</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2638-2639 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_163486 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Cutoff frequency Degradation Doping Electron devices Germanium silicon alloys Heterojunction bipolar transistors P-n junctions Silicon germanium Temperature |
| title | Low-temperature operation of SiGe p-n-p HBTs |
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