Metalorganic Chemical Vapor Deposition Growth of High-Quality InAs/GaSb Type II Superlattices for Mid-IR Photodetector Applications
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| creator | Zhang, X.B. Petschke, A. Mou, S. Xu, C. Ryou, J.H. Chuang, S.L. Hsieh, K.C. Dupuis, R.D. |
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| doi_str_mv | 10.1109/ICIPRM.2006.1634204 |
| format | Conference Proceeding |
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| identifier | ISSN: 1092-8669 |
| ispartof | 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.415-419 |
| issn | 1092-8669 |
| language | eng |
| recordid | cdi_ieee_primary_1634204 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical vapor deposition Gallium arsenide Infrared detectors Laser sintering Metallic superlattices MOCVD Molecular beam epitaxial growth Photodetectors Substrates Temperature |
| title | Metalorganic Chemical Vapor Deposition Growth of High-Quality InAs/GaSb Type II Superlattices for Mid-IR Photodetector Applications |
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