A neural network synapse cell in 90 nm SOS

A simple four-quadrant analog multiplier has been integrated with a pair of hot carrier injection capacitors by a common floating gate. The resulting nonvolatile analog memory cell is ideal for the implementation of the synapse function in analog artificial neural network circuits. The output curves from a synapse cell fabricated in 90 nm SOS (silicon-on-sapphire) are shown. The dependence of gate current to gate voltage for positive and negative increments, respectively, is presented. It is noted that this dependence is somewhat weaker than that observed in Fowler-Nordheim tunneling.< >