Broadband integrated millimeter-wave up- and down-converter GaAs MMICs
The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into com...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2006-05, Vol.54 (5), p.2050-2060 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred,third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2× local oscillator leakage and excellent gain control. To the best of the authors' knowledge,this is the highest level of integration achieved for up- and down-converters at these frequencies. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2006.872793 |