Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into com...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2006-05, Vol.54 (5), p.2050-2060
Hauptverfasser: Mahon, S.J., Convert, E., Beasly, P.T., Bessemoulin, A., Dadello, A., Costantini, A., Fattorini, A., McCulloch, M.G., Lawrence, B.G., Harvey, J.T.
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Sprache:eng
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Zusammenfassung:The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred,third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2× local oscillator leakage and excellent gain control. To the best of the authors' knowledge,this is the highest level of integration achieved for up- and down-converters at these frequencies.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.872793