Effect of buried oxide charge on SOI spreading resistance profile

Effect of buried oxide charge on SOI spreading resistance profile

The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field effect of the buried oxide charge and can be modele...

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Hauptverfasser: Karulkar, P.C., Hillard, R.J., Heddleson, J.M., Rai-Choudhury, P., Abe, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Charge measurement
Current measurement
Electrical resistance measurement
MOSFETs
Semiconductor films
Silicon
Strontium
Threshold voltage
Wafer bonding
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creator Karulkar, P.C.
Hillard, R.J.
Heddleson, J.M.
Rai-Choudhury, P.
Abe, T.
description The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field effect of the buried oxide charge and can be modeled semiquantitatively.< >
doi_str_mv 10.1109/SOI.1991.162877
format Conference Proceeding
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ispartof 1991 IEEE International SOI Conference Proceedings, 1991, p.102-103
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subjects Annealing
Charge measurement
Current measurement
Electrical resistance measurement
MOSFETs
Semiconductor films
Silicon
Strontium
Threshold voltage
Wafer bonding
title Effect of buried oxide charge on SOI spreading resistance profile
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