Effect of buried oxide charge on SOI spreading resistance profile

Effect of buried oxide charge on SOI spreading resistance profile

The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field effect of the buried oxide charge and can be modele...

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Bibliographische Detailangaben
Hauptverfasser: Karulkar, P.C., Hillard, R.J., Heddleson, J.M., Rai-Choudhury, P., Abe, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Charge measurement
Current measurement
Electrical resistance measurement
MOSFETs
Semiconductor films
Silicon
Strontium
Threshold voltage
Wafer bonding
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Zusammenfassung:The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field effect of the buried oxide charge and can be modeled semiquantitatively.< >
DOI:10.1109/SOI.1991.162877