New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

A method for extracting parameters of weakly Fermi-level pinned germanium (Ge) capacitors is introduced. This method makes progress toward a more generally valid reliable interface state parameter extraction. Such a general method is needed to evaluate and explain the behavior of Ge MOS capacitors,...

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Veröffentlicht in:	IEEE electron device letters 2006-05, Vol.27 (5), p.405-408
Hauptverfasser:	Martens, K., Brice De Jaeger, Bonzom, R., Van Steenbergen, J., Meuris, M., Groeseneken, G., Maes, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitors Conductance method Degradation Density Dielectric, amorphous and glass solid devices electrical characterization Electronics Exact sciences and technology Extraction Fermi-level pinning Frequency Ge MOSFET Germanium interface state density extraction Interface states Isothermal processes Metal oxide semiconductors MOS capacitors MOSFET circuits MOSFETs Parameter extraction Pinning Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Transistors Voltage
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Beschreibung
Zusammenfassung:	A method for extracting parameters of weakly Fermi-level pinned germanium (Ge) capacitors is introduced. This method makes progress toward a more generally valid reliable interface state parameter extraction. Such a general method is needed to evaluate and explain the behavior of Ge MOS capacitors, which show characteristics deviating considerably from silicon. The encountered weak pinning confirmed by the new extraction method explains the degraded Ge nMOSFET performance.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2006.873767