Design approach for tunable CMOS active inductor
A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of activ...
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creator | Sharman, R. Abu Khari A'ain Azmi, M. Huang Min Zhe |
description | A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. |
doi_str_mv | 10.1109/SMELEC.2004.1620856 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1620856</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1620856</ieee_id><sourcerecordid>1620856</sourcerecordid><originalsourceid>FETCH-ieee_primary_16208563</originalsourceid><addsrcrecordid>eNpjYJA2NNAzNDSw1A_2dfVxddYzMjAw0TM0MzKwMDVjZuC1NLcwACJjCzNTC3MOBt7i4iwDIDC2NDOytORkMHBJLc5Mz1NILCgoyk9MzlBIyy9SKCnNS0zKSVVw9vUPVkhMLsksS1XIzEspTS7JL-JhYE1LzClO5YXS3AzSbq4hzh66mampqfEFRZm5iUWV8VD7jfHLAgCl4zOx</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Design approach for tunable CMOS active inductor</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Sharman, R. ; Abu Khari A'ain ; Azmi, M. ; Huang Min Zhe</creator><creatorcontrib>Sharman, R. ; Abu Khari A'ain ; Azmi, M. ; Huang Min Zhe</creatorcontrib><description>A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.</description><identifier>ISBN: 9780780386587</identifier><identifier>ISBN: 0780386582</identifier><identifier>DOI: 10.1109/SMELEC.2004.1620856</identifier><language>eng</language><publisher>IEEE</publisher><subject>Active inductors ; Capacitance ; Circuit analysis ; Circuit topology ; Conductivity ; Energy consumption ; Equivalent circuits ; Inductance ; Q factor ; Transconductance</subject><ispartof>2004 IEEE International Conference on Semiconductor Electronics, 2004, p.5 pp.</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1620856$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1620856$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sharman, R.</creatorcontrib><creatorcontrib>Abu Khari A'ain</creatorcontrib><creatorcontrib>Azmi, M.</creatorcontrib><creatorcontrib>Huang Min Zhe</creatorcontrib><title>Design approach for tunable CMOS active inductor</title><title>2004 IEEE International Conference on Semiconductor Electronics</title><addtitle>SMELEC</addtitle><description>A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.</description><subject>Active inductors</subject><subject>Capacitance</subject><subject>Circuit analysis</subject><subject>Circuit topology</subject><subject>Conductivity</subject><subject>Energy consumption</subject><subject>Equivalent circuits</subject><subject>Inductance</subject><subject>Q factor</subject><subject>Transconductance</subject><isbn>9780780386587</isbn><isbn>0780386582</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpjYJA2NNAzNDSw1A_2dfVxddYzMjAw0TM0MzKwMDVjZuC1NLcwACJjCzNTC3MOBt7i4iwDIDC2NDOytORkMHBJLc5Mz1NILCgoyk9MzlBIyy9SKCnNS0zKSVVw9vUPVkhMLsksS1XIzEspTS7JL-JhYE1LzClO5YXS3AzSbq4hzh66mampqfEFRZm5iUWV8VD7jfHLAgCl4zOx</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Sharman, R.</creator><creator>Abu Khari A'ain</creator><creator>Azmi, M.</creator><creator>Huang Min Zhe</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>Design approach for tunable CMOS active inductor</title><author>Sharman, R. ; Abu Khari A'ain ; Azmi, M. ; Huang Min Zhe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_16208563</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Active inductors</topic><topic>Capacitance</topic><topic>Circuit analysis</topic><topic>Circuit topology</topic><topic>Conductivity</topic><topic>Energy consumption</topic><topic>Equivalent circuits</topic><topic>Inductance</topic><topic>Q factor</topic><topic>Transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Sharman, R.</creatorcontrib><creatorcontrib>Abu Khari A'ain</creatorcontrib><creatorcontrib>Azmi, M.</creatorcontrib><creatorcontrib>Huang Min Zhe</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sharman, R.</au><au>Abu Khari A'ain</au><au>Azmi, M.</au><au>Huang Min Zhe</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design approach for tunable CMOS active inductor</atitle><btitle>2004 IEEE International Conference on Semiconductor Electronics</btitle><stitle>SMELEC</stitle><date>2004</date><risdate>2004</risdate><spage>5 pp.</spage><pages>5 pp.-</pages><isbn>9780780386587</isbn><isbn>0780386582</isbn><abstract>A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.</abstract><pub>IEEE</pub><doi>10.1109/SMELEC.2004.1620856</doi></addata></record> |
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subjects | Active inductors Capacitance Circuit analysis Circuit topology Conductivity Energy consumption Equivalent circuits Inductance Q factor Transconductance |
title | Design approach for tunable CMOS active inductor |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T22%3A09%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Design%20approach%20for%20tunable%20CMOS%20active%20inductor&rft.btitle=2004%20IEEE%20International%20Conference%20on%20Semiconductor%20Electronics&rft.au=Sharman,%20R.&rft.date=2004&rft.spage=5%20pp.&rft.pages=5%20pp.-&rft.isbn=9780780386587&rft.isbn_list=0780386582&rft_id=info:doi/10.1109/SMELEC.2004.1620856&rft_dat=%3Cieee_6IE%3E1620856%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1620856&rfr_iscdi=true |