Design approach for tunable CMOS active inductor
A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of activ...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. |
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DOI: | 10.1109/SMELEC.2004.1620856 |