Design approach for tunable CMOS active inductor

A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of activ...

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Hauptverfasser: Sharman, R., Abu Khari A'ain, Azmi, M., Huang Min Zhe
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.
DOI:10.1109/SMELEC.2004.1620856