Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr
In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.
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| creator | Budnitsky, D.L. Lychagin, A.D. Okaevich, L.S. Tolbanov, O.P. |
| description | In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity. |
| doi_str_mv | 10.1109/SIBCON.2005.1611198 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1611198</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1611198</ieee_id><sourcerecordid>1611198</sourcerecordid><originalsourceid>FETCH-ieee_primary_16111983</originalsourceid><addsrcrecordid>eNp9jrFuwkAQRE-KkEiAL6DZH8C5xQJ86RIrAZqkgB6tjjVeZPvQ3brg7-NI1JnmSfOmGGPmaDNE614P-4_y5ztbWrvKcI2IrngyL3ZT2Nwt0eHYzFK62iG5yzer4tnQQfvzHUIFN4oqvm8oigonqEKElpUa8KFT8vrXtKQSOtAAWjMkbmWQ597rMK7lUi8iJ0lKnWfY0nt6K-PUjCpqEs8enJj51-ex3C2EmU-3KC3F--nxNv_f_gKNekYf</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Budnitsky, D.L. ; Lychagin, A.D. ; Okaevich, L.S. ; Tolbanov, O.P.</creator><creatorcontrib>Budnitsky, D.L. ; Lychagin, A.D. ; Okaevich, L.S. ; Tolbanov, O.P.</creatorcontrib><description>In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.</description><identifier>ISBN: 0780392191</identifier><identifier>ISBN: 9780780392199</identifier><identifier>DOI: 10.1109/SIBCON.2005.1611198</identifier><language>eng</language><publisher>IEEE</publisher><subject>Character generation ; Charge carrier processes ; Chromium ; Communication system control ; Contact resistance ; Electrons ; Gallium arsenide ; Ionizing radiation ; ohmic contact ; Ohmic contacts ; Radiation detectors ; the detector structure</subject><ispartof>2005 Siberian Conference on Control and Communications, 2005, p.85-89</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1611198$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1611198$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Budnitsky, D.L.</creatorcontrib><creatorcontrib>Lychagin, A.D.</creatorcontrib><creatorcontrib>Okaevich, L.S.</creatorcontrib><creatorcontrib>Tolbanov, O.P.</creatorcontrib><title>Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr</title><title>2005 Siberian Conference on Control and Communications</title><addtitle>SIBCON</addtitle><description>In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.</description><subject>Character generation</subject><subject>Charge carrier processes</subject><subject>Chromium</subject><subject>Communication system control</subject><subject>Contact resistance</subject><subject>Electrons</subject><subject>Gallium arsenide</subject><subject>Ionizing radiation</subject><subject>ohmic contact</subject><subject>Ohmic contacts</subject><subject>Radiation detectors</subject><subject>the detector structure</subject><isbn>0780392191</isbn><isbn>9780780392199</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrFuwkAQRE-KkEiAL6DZH8C5xQJ86RIrAZqkgB6tjjVeZPvQ3brg7-NI1JnmSfOmGGPmaDNE614P-4_y5ztbWrvKcI2IrngyL3ZT2Nwt0eHYzFK62iG5yzer4tnQQfvzHUIFN4oqvm8oigonqEKElpUa8KFT8vrXtKQSOtAAWjMkbmWQ597rMK7lUi8iJ0lKnWfY0nt6K-PUjCpqEs8enJj51-ex3C2EmU-3KC3F--nxNv_f_gKNekYf</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Budnitsky, D.L.</creator><creator>Lychagin, A.D.</creator><creator>Okaevich, L.S.</creator><creator>Tolbanov, O.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr</title><author>Budnitsky, D.L. ; Lychagin, A.D. ; Okaevich, L.S. ; Tolbanov, O.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_16111983</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Character generation</topic><topic>Charge carrier processes</topic><topic>Chromium</topic><topic>Communication system control</topic><topic>Contact resistance</topic><topic>Electrons</topic><topic>Gallium arsenide</topic><topic>Ionizing radiation</topic><topic>ohmic contact</topic><topic>Ohmic contacts</topic><topic>Radiation detectors</topic><topic>the detector structure</topic><toplevel>online_resources</toplevel><creatorcontrib>Budnitsky, D.L.</creatorcontrib><creatorcontrib>Lychagin, A.D.</creatorcontrib><creatorcontrib>Okaevich, L.S.</creatorcontrib><creatorcontrib>Tolbanov, O.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Budnitsky, D.L.</au><au>Lychagin, A.D.</au><au>Okaevich, L.S.</au><au>Tolbanov, O.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr</atitle><btitle>2005 Siberian Conference on Control and Communications</btitle><stitle>SIBCON</stitle><date>2005</date><risdate>2005</risdate><spage>85</spage><epage>89</epage><pages>85-89</pages><isbn>0780392191</isbn><isbn>9780780392199</isbn><abstract>In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.</abstract><pub>IEEE</pub><doi>10.1109/SIBCON.2005.1611198</doi></addata></record> |
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| identifier | ISBN: 0780392191 |
| ispartof | 2005 Siberian Conference on Control and Communications, 2005, p.85-89 |
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| language | eng |
| recordid | cdi_ieee_primary_1611198 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Character generation Charge carrier processes Chromium Communication system control Contact resistance Electrons Gallium arsenide Ionizing radiation ohmic contact Ohmic contacts Radiation detectors the detector structure |
| title | Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T19%3A59%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Study%20of%20particularities%20for%20metal%20contact%20formation%20to%20the%20semiconductor%20high-resistance%20GaAs:Cr&rft.btitle=2005%20Siberian%20Conference%20on%20Control%20and%20Communications&rft.au=Budnitsky,%20D.L.&rft.date=2005&rft.spage=85&rft.epage=89&rft.pages=85-89&rft.isbn=0780392191&rft.isbn_list=9780780392199&rft_id=info:doi/10.1109/SIBCON.2005.1611198&rft_dat=%3Cieee_6IE%3E1611198%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1611198&rfr_iscdi=true |