Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr

In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.

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Bibliographische Detailangaben
Hauptverfasser:	Budnitsky, D.L., Lychagin, A.D., Okaevich, L.S., Tolbanov, O.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Character generation Charge carrier processes Chromium Communication system control Contact resistance Electrons Gallium arsenide Ionizing radiation ohmic contact Ohmic contacts Radiation detectors the detector structure
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Beschreibung
Zusammenfassung:	In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity.
DOI:	10.1109/SIBCON.2005.1611198