Cancellation of electrical memory effects in FET power amplifiers

Memory effects are often responsible for degrading the performance of amplifier linearization schemes. This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the condi...

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Hauptverfasser:	Richards, A., Morris, K.A., McGeehan, J.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Baseband Circuits FETs Frequency dependence Impedance Intermodulation distortion Linearity Power amplifiers Telephony
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creator	Richards, A. Morris, K.A. McGeehan, J.P.
description	Memory effects are often responsible for degrading the performance of amplifier linearization schemes. This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the conditions necessary for suppression of asymmetry and reduction of frequency dependent variation within the intermodulation distortion. Successful operation is possible for signals having bandwidths of up to 30MHz.
doi_str_mv	10.1109/EUMC.2005.1610090
format	Conference Proceeding
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This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the conditions necessary for suppression of asymmetry and reduction of frequency dependent variation within the intermodulation distortion. 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This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the conditions necessary for suppression of asymmetry and reduction of frequency dependent variation within the intermodulation distortion. Successful operation is possible for signals having bandwidths of up to 30MHz.</description><subject>Bandwidth</subject><subject>Baseband</subject><subject>Circuits</subject><subject>FETs</subject><subject>Frequency dependence</subject><subject>Impedance</subject><subject>Intermodulation distortion</subject><subject>Linearity</subject><subject>Power amplifiers</subject><subject>Telephony</subject><isbn>9782960055122</isbn><isbn>2960055128</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tqwzAURAWl0JL6A0o3-gG7upL1uMtg0gckdNOsgyxfgYpfyIaSv6-hWQ1zOAwMY88gKgCBr4fzqamkELoCA0KguGMFWifRbEyDlA-sWJYfIQSgscrZR7Zv_Bio7_2appFPkVNPYc0p-J4PNEz5yinGDS08jfzt8M3n6Zcy98Pcp5goL0_sPvp-oeKWO3betOajPH69fzb7Y5nA6rU0HgyG2jkZWgcWUQN0AcmoGGqLnZNKedtKH8ig3grqtsNosLbOBw1qx17-dxMRXeacBp-vl9tR9QeVlkfN</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Richards, A.</creator><creator>Morris, K.A.</creator><creator>McGeehan, J.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Cancellation of electrical memory effects in FET power amplifiers</title><author>Richards, A. ; Morris, K.A. ; McGeehan, J.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-6a169c4882cb81799511dc9e63fc479d8233a7b2ace69523395bd9f69478ac513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Bandwidth</topic><topic>Baseband</topic><topic>Circuits</topic><topic>FETs</topic><topic>Frequency dependence</topic><topic>Impedance</topic><topic>Intermodulation distortion</topic><topic>Linearity</topic><topic>Power amplifiers</topic><topic>Telephony</topic><toplevel>online_resources</toplevel><creatorcontrib>Richards, A.</creatorcontrib><creatorcontrib>Morris, K.A.</creatorcontrib><creatorcontrib>McGeehan, J.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Richards, A.</au><au>Morris, K.A.</au><au>McGeehan, J.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Cancellation of electrical memory effects in FET power amplifiers</atitle><btitle>2005 European Microwave Conference</btitle><stitle>EUMC</stitle><date>2005</date><risdate>2005</risdate><volume>2</volume><spage>4 pp.</spage><epage>974</epage><pages>4 pp.-974</pages><isbn>9782960055122</isbn><isbn>2960055128</isbn><abstract>Memory effects are often responsible for degrading the performance of amplifier linearization schemes. This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the conditions necessary for suppression of asymmetry and reduction of frequency dependent variation within the intermodulation distortion. Successful operation is possible for signals having bandwidths of up to 30MHz.</abstract><pub>IEEE</pub><doi>10.1109/EUMC.2005.1610090</doi></addata></record>
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Bandwidth Baseband Circuits FETs Frequency dependence Impedance Intermodulation distortion Linearity Power amplifiers Telephony
title	Cancellation of electrical memory effects in FET power amplifiers
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