Cancellation of electrical memory effects in FET power amplifiers

Cancellation of electrical memory effects in FET power amplifiers

Memory effects are often responsible for degrading the performance of amplifier linearization schemes. This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the condi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Richards, A., Morris, K.A., McGeehan, J.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Baseband
Circuits
FETs
Frequency dependence
Impedance
Intermodulation distortion
Linearity
Power amplifiers
Telephony
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Beschreibung
Zusammenfassung:Memory effects are often responsible for degrading the performance of amplifier linearization schemes. This paper presents a circuit which is capable of cancelling electrical memory effects present within amplifiers employing FET devices. Practical results show that the circuit can provide the conditions necessary for suppression of asymmetry and reduction of frequency dependent variation within the intermodulation distortion. Successful operation is possible for signals having bandwidths of up to 30MHz.
DOI:10.1109/EUMC.2005.1610090