An improved model for collector currents in lateral PNP transistors

An improved model for collector currents in lateral PNP transistors

A physically based analytical model for collector current in lateral PNP transistors is derived by solving the two-dimensional diffusion equation. Comparison with computer simulations and existing models demonstrates improvements in accuracy realized by the model. This analytical model relates circu...

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Bibliographische Detailangaben
1. Verfasser: Joardar, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Circuit simulation
Computational modeling
Computer simulation
Equations
Numerical models
Radiative recombination
Transistors
Voltage
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Beschreibung
Zusammenfassung:A physically based analytical model for collector current in lateral PNP transistors is derived by solving the two-dimensional diffusion equation. Comparison with computer simulations and existing models demonstrates improvements in accuracy realized by the model. This analytical model relates circuit model parameters to physical process parameters and should therefore find application in circuit design optimization and in statistical analyses.< >
DOI:10.1109/BIPOL.1991.160977