Characterization of EOS induced defects on submicron devices using 2D spectral imaging

Characterization of EOS induced defects on submicron devices using 2D spectral imaging

Localization, identification and characterization of EOS-induced defects found in submicron devices were demonstrated using a new FA procedure. IR photon emission and circuit analysis were used for defect localization while spectral profile of photon emission was utilized for defect finger-printing...

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Bibliographische Detailangaben
Hauptverfasser: Bailon, M.F., Salinas, P.F., Arboleda, J.S., Miranda, J.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit analysis
Circuit simulation
Earth Observing System
Failure analysis
Image analysis
Integrated circuit technology
Microscopy
Optical imaging
Photoelectricity
Spectral analysis
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Beschreibung
Zusammenfassung:Localization, identification and characterization of EOS-induced defects found in submicron devices were demonstrated using a new FA procedure. IR photon emission and circuit analysis were used for defect localization while spectral profile of photon emission was utilized for defect finger-printing analysis. Finally, frontside and backside FA methods were done to confirm the actual failure mechanism in the device under analysis
ISSN:1930-8841
2374-8036
DOI:10.1109/IRWS.2005.1609580