The origin of variable retention time in DRAM

The origin of variable retention time in DRAM

To investigate the origin of DRAM variable retention time (VRT), we use test structures and carefully measure the time dependence of leakage current in DRAM. Consequently we find for the first time that the junction leakage current fluctuates just like random telegraph signal. We analyze the leakage...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mori, Y., Ohyu, K., Okonogi, K., Yamada, R.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Circuit testing
Current measurement
Fluctuations
Laboratories
Leakage current
Random access memory
Subthreshold current
Telegraphy
Temperature dependence
Time measurement
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Beschreibung
Zusammenfassung:To investigate the origin of DRAM variable retention time (VRT), we use test structures and carefully measure the time dependence of leakage current in DRAM. Consequently we find for the first time that the junction leakage current fluctuates just like random telegraph signal. We analyze the leakage current fluctuation in detail and find it the origin of VRT
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609541