High speed toggle MRAM with mgO-based tunnel junctions

High speed toggle MRAM with mgO-based tunnel junctions

We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlO x -based material. T...

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Bibliographische Detailangaben
Hauptverfasser: Slaughter, J.M., Dave, R.W., Durlam, M., Kerszykowski, G., Smith, K., Nagel, K., Feil, B., Calder, J., DeHerrera, M., Garni, B., Tehrani, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
CMOS technology
Magnetic circuits
Magnetic materials
Magnetic properties
Magnetic switching
Magnetic tunneling
Random access memory
Semiconductor materials
Tunneling magnetoresistance
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Beschreibung
Zusammenfassung:We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlO x -based material. The 90 nm CMOS test vehicle has 8 kb arrays of 1T1MTJ memory cells with two orthogonal program lines oriented at 45deg from the bit easy axis for toggle switching. Read and toggle-write operations are demonstrated
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609496