The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics

We show for the first time that trap generation and breakdown in ultra thin SiON gate dielectrics are triggered by the release of two hydrogen species (H + and H 0 ) from the anode during TDDB stress

Bibliographische Detailangaben

Hauptverfasser:	Nicollian, P.E., Krishnan, A.T., Bowen, C., Chakravarthi, S., Chancellor, C.A., Khamankar, R.B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Capacitance-voltage characteristics Cathodes Dielectric breakdown Electric breakdown Electron traps Hydrogen Low voltage MOS devices Stress
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