The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics

The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics

We show for the first time that trap generation and breakdown in ultra thin SiON gate dielectrics are triggered by the release of two hydrogen species (H + and H 0 ) from the anode during TDDB stress

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Bibliographische Detailangaben
Hauptverfasser: Nicollian, P.E., Krishnan, A.T., Bowen, C., Chakravarthi, S., Chancellor, C.A., Khamankar, R.B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Capacitance-voltage characteristics
Cathodes
Dielectric breakdown
Electric breakdown
Electron traps
Hydrogen
Low voltage
MOS devices
Stress
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Beschreibung
Zusammenfassung:We show for the first time that trap generation and breakdown in ultra thin SiON gate dielectrics are triggered by the release of two hydrogen species (H + and H 0 ) from the anode during TDDB stress
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2005.1609360