Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)
The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysi...
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| creator | Giraud, S. Courreges, S. Cros, D. Madrangeas, V. |
| description | The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices. |
| doi_str_mv | 10.1109/EUMC.2005.1608906 |
| format | Conference Proceeding |
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Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.</description><identifier>ISBN: 9782960055122</identifier><identifier>ISBN: 2960055128</identifier><identifier>DOI: 10.1109/EUMC.2005.1608906</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectric substrates ; Dielectric thin films ; Ferroelectric materials ; Microstrip ; Microwave devices ; Microwave theory and techniques ; Permittivity ; Sputtering ; Thin film devices ; Voltage</subject><ispartof>2005 European Microwave Conference, 2005, Vol.1, p.4 pp.</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1608906$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1608906$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Giraud, S.</creatorcontrib><creatorcontrib>Courreges, S.</creatorcontrib><creatorcontrib>Cros, D.</creatorcontrib><creatorcontrib>Madrangeas, V.</creatorcontrib><title>Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)</title><title>2005 European Microwave Conference</title><addtitle>EUMC</addtitle><description>The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.</description><subject>Dielectric substrates</subject><subject>Dielectric thin films</subject><subject>Ferroelectric materials</subject><subject>Microstrip</subject><subject>Microwave devices</subject><subject>Microwave theory and techniques</subject><subject>Permittivity</subject><subject>Sputtering</subject><subject>Thin film devices</subject><subject>Voltage</subject><isbn>9782960055122</isbn><isbn>2960055128</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1KxDAYRQMiKGMfQNxkqYuO-Zk0zVLK-AMd3Izr4WvyxUbaZkjjiD69I87qwuFwFpeQa86WnDNzv37bNEvBmFryitWGVWekMLoWpjoyxYW4IMU8fzDGuKm0rPUlsU0PCWzGFH4ghzjR6KnHlCIOaHMKluY-TKUPw0j3A0yQ6Bhsil9wQOrwECzO9HMO0_tRRDpi7qP7iwxhQnq7ie3dFTn3MMxYnHZBto_rbfNctq9PL81DWwauVS6VQjSOQQfAjOPWSW1EBbWzWgrlJHOq7rqK-5W3IJzEzpiVx9orp4ywckFu_rMBEXf7FEZI37vTE_IXN9BV3w</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Giraud, S.</creator><creator>Courreges, S.</creator><creator>Cros, D.</creator><creator>Madrangeas, V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)</title><author>Giraud, S. ; Courreges, S. ; Cros, D. ; Madrangeas, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-55ee9d0abaa09d1cd37926a8dc7325d30d58bb61f4fca2d3eb994fe8f5d592c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Dielectric substrates</topic><topic>Dielectric thin films</topic><topic>Ferroelectric materials</topic><topic>Microstrip</topic><topic>Microwave devices</topic><topic>Microwave theory and techniques</topic><topic>Permittivity</topic><topic>Sputtering</topic><topic>Thin film devices</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Giraud, S.</creatorcontrib><creatorcontrib>Courreges, S.</creatorcontrib><creatorcontrib>Cros, D.</creatorcontrib><creatorcontrib>Madrangeas, V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Giraud, S.</au><au>Courreges, S.</au><au>Cros, D.</au><au>Madrangeas, V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)</atitle><btitle>2005 European Microwave Conference</btitle><stitle>EUMC</stitle><date>2005</date><risdate>2005</risdate><volume>1</volume><spage>4 pp.</spage><pages>4 pp.-</pages><isbn>9782960055122</isbn><isbn>2960055128</isbn><abstract>The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.</abstract><pub>IEEE</pub><doi>10.1109/EUMC.2005.1608906</doi></addata></record> |
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| ispartof | 2005 European Microwave Conference, 2005, Vol.1, p.4 pp. |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Dielectric substrates Dielectric thin films Ferroelectric materials Microstrip Microwave devices Microwave theory and techniques Permittivity Sputtering Thin film devices Voltage |
| title | Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) |
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