Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)

The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysi...

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Hauptverfasser: Giraud, S., Courreges, S., Cros, D., Madrangeas, V.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.
DOI:10.1109/EUMC.2005.1608906